Baojie Feng (冯宝杰)广岛大学同步辐射中心 Dr. Baojie Feng (冯宝杰) obtained his B.S. degree in Shandong University, Weihai (2009) and Ph.D degree in Institute of Physics, Chinese Academy of Sciences (2015). From 2013 to 2014, he studied in University of California, Irvine as a visiting scholar. From 2015 to 2017, he worked in The Institute for Solid State Physics, The University of Tokyo (Japan) as a postdoctoral fellow. From 2017 to now, he works as an assistant professor in Hiroshima Synchrotron Radiation Center, Hiroshima University (Japan). He is experienced in synchrotron/laser based spin and angle resolved photoemission spectroscopy (SARPES), molecular beam epitaxy (MBE), and scanning tunneling microscopy/spectroscopy (STM/STS). He published 12 peer-reviewed papers as the first author or corresponding author and his total citation is more than 2000 (google scholar). |
| Visiting dates:
2018-01-03 - 2018-01-04 Office No:
M-1019 E-mail:
annzhu_cpl@iphy.ac.cn Inviter: Prof. Kehui Wu Contact Person: Contact Number: |
| Talk Title: 新型二维材料的探索和电子结构研究 Talk Place: M-236 Talk Time: 3-Jan-2018 10:00 am During the last decade, two-dimensional (2D) materials, exemplified by the well-known graphene that can be exfoliated from the bulk phase, have attracted intensive attention. The advent of novel 2D materials makes it possible to fabricate devices at the atomic scale. Here, I will briefly introduce three of the newly emerging 2D materials: silicene, borophene and Cu2Si. These materials contain only one atomic layer and have been successfully synthesized on metal substrates by molecular beam epitaxy (MBE). Scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) measurements have unraveled intriguing properties in these materials, such as the Dirac cones in silicene and borophene and Dirac nodal lines in Cu2Si. These novel properties are not only of fundamental interest but also essential for the future device applications. References: B. Feng, et al. Phys. Rev. Lett. 118, 096401 (2017). B. Feng, et al. Nat. Commun. 8, 1007 (2017) B. Feng, et al. Adv. Mater. 170425 (2017) B. Feng, et al. Nat. Chem. 8, 525 (2016). B. Feng, et al. ACS Nano 7, 9409 (2013). B. Feng, et al. Nano Lett. 12, 3507 (2012). |
| Description | Place | Time | Notes |
| Noval 2D materials and their electronic structures | M-236 | 2018-01-03 10:00 - 11:00 |
